Abstract

We present advanced design of III-V/Si hybrid MOS optical modulator to reduce parasitic capacitance and resistance toward high-speed modulation. We successfully achieved 21 times smaller RC constant, improving the trade-off between modulation efficiency and bandwidth.

© 2020 The Author(s)

PDF Article
More Like This
Taper-less III-V/Si Hybrid MOS Optical Phase Shifter using Ultrathin InP Membrane

Shuhei Ohno, Qiang Li, Naoki Sekine, Junichi Fujikata, Masataka Noguchi, Shigeki Takahashi, Kasidit Toprasertpong, Shinichi Takagi, and Mitsuru Takenaka
M2B.6 Optical Fiber Communication Conference (OFC) 2020

High-efficiency, Low-loss Optical Phase Modulator based on III-V/Si Hybrid MOS Capacitor

Mitsuru Takenaka, Jae-Hoon Han, Jin-Kwon Park, Frederic Boeuf, Junichi Fujikata, Shigeki Takahashi, and Shinichi Takagi
Tu3K.3 Optical Fiber Communication Conference (OFC) 2018

Efficient Optical Modulator by Reverse-biased III-V/Si Hybrid MOS Capacitor based on FK Effect and Carrier Depletion

Qiang Li, Chong Pei Ho, Shinichi Takagi, and Mitsuru Takenaka
M4A.2 Optical Fiber Communication Conference (OFC) 2019

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription

Supplementary Material (1)

» Media 1: PDF (1436 KB)