Abstract

We demonstrate the first local monolithic integration of high-speed III-V p-i-n photodetectors on Si by in-plane epitaxy. Ultra-low capacitance permits data reception at 32Gbps. The approach allows close integration to electronics enabling future receiverless communication.

© 2020 The Author(s)

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription