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Optical Static RAM Cell Using a Monolithically Integrated InP Flip-Flop and Wavelength-Encoded Signals

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Abstract

We experimentally demonstrate successful optical static RAM cell operation with READ/WRITE at 5Gbps and I/O wavelength diversity capabilities. The RAM cell incorporates an integrated SOA-MZI Access Gate and a monolithic InP Flip-Flop with coupled switches.

© 2016 Optical Society of America

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