−1 V Bias 56 Gbps Germanium Waveguide p-i-n Photodetector with Silicon Contacts

H. Chen; H. Chen; P. Verheyen; P. De Heyn; G. Lepage; J. De Coster; P. Absil; G. Roelkens; J. Van Campenhout

doi:10.1364/OFC.2016.Tu2D.6

Optical Fiber Communication Conference
OSA Technical Digest (online) (Optica Publishing Group, 2016),
paper Tu2D.6
•https://doi.org/10.1364/OFC.2016.Tu2D.6

−1 V Bias 56 Gbps Germanium Waveguide p-i-n Photodetector with Silicon Contacts

H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout

Optical Fiber Communication Conference 2016

Anaheim, California United States
20–22 March 2016
ISBN: 978-1-943580-07-1

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High-speed Detectors (Tu2D)

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H. Chen, P. Verheyen, P. De Heyn, G. Lepage, J. De Coster, P. Absil, G. Roelkens, and J. Van Campenhout, "−1 V Bias 56 Gbps Germanium Waveguide p-i-n Photodetector with Silicon Contacts," in Optical Fiber Communication Conference, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper Tu2D.6.

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Abstract

We demonstrate a silicon-contact-only 56 Gbps germanium waveguide photodetector operating at −1 V. The dark current is below 4 nA and the responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm.

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