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SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe

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Abstract

We demonstrate strained SiGe-based carrier-injection MZ optical modulator with low driving current of 1.47 mA owing to the enhanced plasma dispersion effect in SiGe. The 10 Gbps modulation with clear eye opening is also obtained.

© 2015 Optical Society of America

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