Abstract
We demonstrate InP-based modified uni-traveling carrier photodiodes on silicon-on-insulator (SOI) waveguides with an internal responsivity of 0.95 A/W and 48 GHz bandwidth. The RF output power reaches 12 dBm at 40 GHz, which is the highest reported output power of high-speed waveguide photodiodes.
© 2015 Optical Society of America
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