Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > OFC > 2014 > W4C > W4C.5

High Performance 1.3µm InAs Quantum Dot Lasers Epitaxially Grown on Silicon

Alan Y. Liu, Chong Zhang, Andrew Snyder, Dimitri Lubychev, Joel M. Fastenau, Amy W.K. Liu, Arthur C. Gossard, and John E. Bowers

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate 1.3 µm InAs quantum dot lasers on silicon by molecular beam epitaxial growth with low thresholds (16 mA), high output power (>50 mW), high T0 (>200 K), and high temperature lasing (115 °C).

© 2014 Optical Society of America

PDF Article
More Like This
Electrically Pumped 1.3-µm InAs/GaAs Quantum Dot Laser Monolithically Grown on Si Substrate Lasing up to 111°C

Siming Chen, Mingchu Tang, Qi Jiang, Jiang Wu, Vitaliy G. Dorogan, Mourad Benamara, Yuriy I. Mazur, Gregory J. Salamo, Alwyn Seeds, and Huiyun Liu
SW3F.1 CLEO: Science and Innovations (CLEO:S&I) 2015

High Performance 1.3 μm Aluminum-Free Quantum Dot Lasers Grown by MOCVD

Lei Wang, Hongwei Zhao, Bei Shi, Sergio Pinna, Simone Suran Brunelli, Fengqiao Sang, Bowen Song, and Jonathan Klamkin
T4H.2 Optical Fiber Communication Conference (OFC) 2020

High Performance of InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si substrate with InAlAs/GaAs Dislocation Filter Layers Introducing

Mingchu Tang, Siming Chen, Qi Jiang, Jiang Wu, Alwyn Seeds, and Huiyun Liu
CB_9_2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2015

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use