Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > OFC > 2014 > Tu2C > Tu2C.2

Development of Si photonics technology: Ge/Si avalanche photodiode for PON applications

Mengyuan Huang, Pengfei Cai, Liangbo Wang, Tuo Shi, Wang Chen, Su Li, Guanghui Hou, Ching-yin Hong, and Dong Pan

Not Accessible

Your library or personal account may give you access

Abstract

We accomplished the first mass-production of Ge/Si avalanche photodiode (APD) for FTTx applications in a standard CMOS foundry. Our APDs satisfy sensitivity requirements of 10G PON (both OLT and ONU sides) applications within −5°C~75°C.

© 2014 Optical Society of America

PDF Article
More Like This
High Performance Ge/Si Avalanche Photodiodes Development in Intel

Y. Kang, Z. Huang, Y. Saado, J. Campbell, A. Pauchard, J. Bowers, and M.J. Paniccia
OWZ1 Optical Fiber Communication Conference (OFC) 2011

Uncooled High Speed Ge/Si Avalanche Photodiode for 50 Gbit/s-PON with 60 km Reach

Jérémy Potet, Gaël Simon, Georges Gaillard, Camille Dessemond, Fabienne Saliou, Mathilde Gay, Philippe Chanclou, and Monique Thual
Th3G.3 Optical Fiber Communication Conference (OFC) 2023

Research of high performance Ge/Si avalanche photodiodes for single-photon detection

Chong Li, Chunlai Xue, Xia Guo, and Zhi Liu
ATh3A.48 Asia Communications and Photonics Conference (ACP) 2014

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use