Abstract

We demonstrate InP-based modified uni-traveling carrier photodiodes on SOI waveguides with an internal responsivity of 0.85 A/W, up to 30 GHz bandwidth, and high RF output power. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA*GHz and +10 dBm RF output power at 20 GHz.

© 2013 OSA

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