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Conferences > OFC > 2012 > OW4F > OW4F.4

Doping Geometries for 40G Carrier-Depletion-Based Silicon Optical Modulators

Hui Yu, Wim Bogaerts, Katarzyna Komorowska, Roel Baets, Dietmar Korn, Luca Alloatti, David Hillerkuss, Christian Koos, Wolfgang Freude, Juerg Leuthold, Joris Van Campenhout, Peter Verheyen, Johan Wouters, Myriam Moelants, and Philippe Absil

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Abstract

A comparison is preformed between carrier-depletion modulators with different doping patterns to reach low VπLπ = 0.62 V∙cm at DC with interdigitated and lateral PN junctions respectively, but also show modulation at 35 Gbit/s (errorfree).

© 2012 Optical Society of America

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