Abstract

We present a vertical-illumination-type 100% Ge-on-Si photodetector with the responsivity up to 0.93 A/W at λ~1.55 μm. The 10Gbps photoreceiver with a fabricated 60 μm-diameter device exhibits high sensitivity of -19.5 dBm for λ~1.55 μm.

© 2011 OSA

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