Abstract

We have demonstrated a CMOS Optoelectronic technology platform, using a 650mW 4×10-Gb/s 0.13 µm silicon-on-insulator integrated transceiver chip, co-packaged with an externally modulated laser, to enable high density data interconnects at <$1 per Gbps.

© 2010 IEEE Communications Society, IEEE Photonics Society, OSA, Telcordia

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