Abstract

We demonstrate Si/SiGe Impact-Ionization-Avalanche-Transit-Time Photodiodes at 830nm wavelength. It achieves an ultra-high gain-bandwidth product (690GHz, 30GHz bandwidth) with high external efficiency (53.2%) and 10Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.

© 2009 Optical Society of America

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