Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Optical Fiber Communication Conference and National Fiber Optic Engineers Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper OMR2
  • https://doi.org/10.1364/OFC.2009.OMR2

A Si/SiGe Based Impact Ionization Avalanche Transit Time Photodiode with Ultra-high Gain-Bandwidth Product (690GHz) for 10-Gb/s Fiber Communication

Not Accessible

Your library or personal account may give you access

Abstract

We demonstrate Si/SiGe Impact-Ionization-Avalanche-Transit-Time Photodiodes at 830nm wavelength. It achieves an ultra-high gain-bandwidth product (690GHz, 30GHz bandwidth) with high external efficiency (53.2%) and 10Gbit/sec eye-opening neither using costly silicon-on-insulator substrate nor integrating with active ICs.

© 2009 Optical Society of America

PDF Article
More Like This
Si/SiGe-Based Photodiode on a Standard Silicon Substrate for 10-Gbit/s Short-Reach Fiber Communication at 830nm Wavelength

Y.-S. Wu, J.-W. Shi, and Z.-L. Li
CMY4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007

Microwave Nonlinearities in Ge/Si Avalanche Photodiodes having a Gain-Bandwidth Product of 300 GHz

M. Piels, A. Ramaswamy, W. Sfar Zaoui, J. E. Bowers, Y. Kang, and M. Morse
OMR1 Optical Fiber Communication Conference (OFC) 2009

Origin of the Gain-Bandwidth-Product Enhancement in Separate-Absorption-Charge-Multiplication Ge/Si Avalanche Photodiodes

Wissem Sfar Zaoui, Hui-Wen Chen, John E. Bowers, Yimin Kang, Mike Morse, Mario J. Paniccia, Alexandre Pauchard, and Joe C. Campbell
OMR6 Optical Fiber Communication Conference (OFC) 2009

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved