Abstract

The nonlinearity of a 300 GHz gain bandwidth Separate-Absorption-Charge-Multiplication Ge/Si avalanche photodiode was examined experimentally for varying multiplication factors. The maximum second and third order dynamic ranges were 84.8 dB·Hz<sup>1/2</sup>and 101.5 dB·Hz<sup>2/3</sup>, respectively.

© 2009 Optical Society of America

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