We demonstrate top-illuminated InGaAs pin photodiodes with both a large area (ϕ56 μm) and low capacitance (212 fF) for 10 Gb/s MMF applications. The devices exhibit high-responsivity (0.88 A/W) and broad bandwidth (8.8 GHz).

© 2008 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription