Abstract
We demonstrate the first low-threshold continuous-wave (CW) 1.55-μm GaAs-based lasers. Using a single GaInNAsSb quantum well as the active region, edge-emitting lasers yielded CW thresholds as low as 579 A/cm2 (550 A/cm2 pulsed) and output powers > 100mW.
© 2006 Optical Society of America
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