Abstract

Wafer-fused InGaAlAs/AlGaAs VCSELs emitting in the vicinity of 1325 nm with InAlGaAs-based tunnel junction injection show record high 1.2 mW single mode output and 40 dB side-mode suppression ratio in the 20-80°C temperature range and good on-wafer device parameters uniformity.

© 2005 Optical Society of America

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