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Conferences > OFC > 2005 > OFM > OFM4
  • Optical Fiber Communication Conference and Exposition and The National Fiber Optic Engineers Conference
  • Technical Digest (CD) (Optica Publishing Group, 2005),
  • paper OFM4

A Low-Dark-Current InGaAs Photodetector Made on Metamorphic InGaP Buffered GaAs Substrate

Chi-Kuan Lin, Hao-Chung Kuo, Gong-Ru Lin, and M. Feng

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Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP (0.51<x<l) buffered GaAs substrate is demonstrated with dark current, responsivity, noise-equipment power, and bandwidth of 13 pA, 0.77 A/W, 6.9⨉10-11 W/Hz0.5, and 7.5 GHz, respectively.

© 2005 Optical Society of America

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