Abstract

A novel top-illuminated In0.53Ga0.47As p-i-n photodiode grown on linearly graded metamorphic InxGa1-xP (0.51<x<1) buffered GaAs substrate is demonstrated with dark current, responsivity, noise-equipment power, and bandwidth of 13 pA, 0.77 A/W, 6.9×10-11 W/Hz0.5, and 7.5 GHz, respectively.

© 2005 Optical Society of America

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