Abstract

1.3µm AlGaInAs-MQW DFB Laser Diodes were fabricated for 10Gb/s uncooled light sources. Applying an n-InGaAsP/n-InP buried grating, output power of 5mW at 120°C and clear eye opening at 105°C for OC-192 mask was obtained.

© 2004 Optical Society of America

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