High-power single transverse-mode 1.05 µm laser diodes are important for Tm2+-doped fiber amplifier (TDFA) application to expand the transmission capacity in DWDM optical networks with S- (1.48–1.51 µm) and S+-bands (1.45–1.48 µm).1,2 In the 0.98 µm wavelength region, InGaAs quantum well lasers successfully operate for Er-doped fiber amplifiers.3,4 With increasing wavelength more than 1 µm, however, the high In content is required in the quantum well active layer whose thickness approaches the critical thickness.5 It is very difficult to grow highly lattice-mismatched materials with high quality. In order to overcome this difficulty, strain compensation using tensile barriers adjacent to a highly compressively strained InGaAs active layer has been proposed and improved quality has been demonstrated by the present authors.6 In addition, almost temperature-insensitive operation has been obtained in strain-compensated laser diodes since GaAsP tensile barriers act as energy barriers for preventing electron leakage from a quantum well.7,8

© 2002 Optical Society of America

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