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Optica Publishing Group
  • Optical Fiber Communications Conference
  • OSA Trends in Optics and Photonics (Optica Publishing Group, 2002),
  • paper ThGG77

High temperature and isolator-free 1310 nm photonic integrated surface emitter operating at 2.5 Gb/s over 25 km transmission

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Abstract

There is a great need for cost effective, active, un-cooled photonic components with isolator-free operation for the emerging metro/GigabitEther-net market as we move from A-PON to E-PON applications. LAN network demands have stimulated great success in GaAs 850 nm vertical emitters for Gb/s applications. The advantages include ease of on-wafer testing, ease of fiber coupling to significantly lower cost, and the potential for large-scale 2D arrays for interconnects. The rapid emergence of the access network has accelerated the demand for 1310 and 1550 nm devices with reach distances of a few km and beyond. Key advances have been achieved in vertical emitters for low-threshold, high differential gain,1 good transmission distance,2 high optical power, and using novel materials, primarily at room temperature.3 To meet the low cost and manufacturability requirements for current Metro applications, un-cooled, current-pumped emitters without optical isolation are highly desirable. Using the concept of photonic lightwave circuits,4 we report for the first time 25 km transmission at 70°C using a packaged, 1310 nm vertical emitter with low series resistance and an integrated monitor photodiode that facilitates performance monitoring and network management.

© 2002 Optical Society of America

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