High power and small aspect ratio 980 nm ridge waveguide laser diodes consisted of asymmetrically expanded optical field normal to the active layer

Kimio Shigihara; Kazushige Kawasaki; Yasuaki Yoshida; Shin’ichi Yamamura; Tetsuya Yagi; Etsuji Omura

Optical Fiber Communications Conference
OSA Trends in Optics and Photonics (Optica Publishing Group, 2002),
paper ThGG74

High power and small aspect ratio 980 nm ridge waveguide laser diodes consisted of asymmetrically expanded optical field normal to the active layer

Kimio Shigihara, Kazushige Kawasaki, Yasuaki Yoshida, Shin’ichi Yamamura, Tetsuya Yagi, and Etsuji Omura

Optical Fiber Communication Conference 2002

Anaheim, California United States
ISBN: 1-55752-700-8

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K. Shigihara, K. Kawasaki, Y. Yoshida, S. ’i. Yamamura, T. Yagi, and E. Omura, "High power and small aspect ratio 980 nm ridge waveguide laser diodes consisted of asymmetrically expanded optical field normal to the active layer," in Optical Fiber Communications Conference, A. Sawchuk, ed., Vol. 70 of OSA Trends in Optics and Photonics (Optica Publishing Group, 2002), paper ThGG74.

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Abstract

High power 980 nm laser diodes (LDs) are enormously requested in order to realize dense wavelength-division multiplexing (DWDM) system¹ by means of erbium doped fiber amplifiers (EDFAs). We have developed 250 mW class high power and high reliable 980 nm LDs by adopting a window structure to facets.² Recently, higher power and smaller aspect ratio for 980 nm LDs have been strongly required in order to attain high power EDFA modules by way of enabling high coupling efficiency between LDs and fibers.

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