Abstract
A resonant tunneling diode(RTD) can be imbedded in an optical waveguide to produce a new type of integrated optoelectronic device which integrates an electronic amplifier with a waveguide electroabsorption modulator (EAM). The device is called, the RTD- EAM and it is particularly well suited to high-speed, low voltage, digital operation. An expression for the magnitude of the electric field switching is derived and compared with an experimental measurement of the Franz-Keldysh band-edge shift at 1550nm of the InAlGaAs semiconductor employed to form the optical waveguide, agreement to within 12% is obtained.
© 2001 Optical Society of America
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