Abstract

We present characteristics of InGaAsP electroabsorption modulators with variable length and mesa width. We present characteristics of InGaAsP electroabsorption modulators with variable length and mesa width. We demonstrate devices with return loss below -10dB, bandwidth above 40GHz and extinction ratio of 10dB/2V. We show that low capacitance is advantageous for high-speed operation even when achieved at the expense of increased series resistance.

© 2000 Optical Society of America