Abstract
For future photonic communications systems low-cost optoelectronic-integrated circuits are indispensable. These photonic ICs should have an ultrahigh capacity and should offer a maximum of flexibility in device architecture. High performance and high reliability are a must for the economic implementation. Based on our experiences in the fabrication of a polarization diversity heterodyne receiver (PDHRx),1 we present here an improved, cost-effective, and versatile integration PIC process with reduced epitaxial growth steps, which are one of the essential cost-driving factors for such an integration. The process enables the integration of fast single-mode lasers, waveguide devices, and fast balanced photodetectors3 with three MOVPE growth steps only without sacrificing device performance. The semi-insulating (si) blocking layers of the laser and those layers for the waveguide and the photodetector stack are all grown in a single selective-area MOVPE regrowth run after fabrication of the active region of the high-speed si-buried-het- erostructure distributed feedback (SIBH-DFB) lasers (c.f. Fig. 1).
© 1996 Optical Society of America
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