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Correlation of leakage-induced distortion with I-V characteristics in 1310-nm DFB lasers

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Abstract

The behavior of second-order intermodulation distortion (IMD2) versus laser bias is a strong indicator of analog distributed- feedback (DFB) laser chip and package performance. Although IMD2 is generally frequency dependent, low-frequency data provide information on modal stability, gain compression, spatial hole burning, leakage currents, optical cavity effects, and temperature effects. We propose here a simple model, based on easily measured dc parameters, that can be used to predict IMD2 performance in the case of lasers dominated by leakage current distortion. Measurements on approximately 100 DFB lasers confirm that the model describes the behavior of lasers having very nonlinear and temperature-dependent Id/V/d/ curves and strong dependence of distortion on bias current.

© 1994 Optical Society of America

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