Abstract

Avalanche-photodiode (APD) receivers have several advantages over receivers that use fiber amplifiers. They can be used for wavelengths of both 1.3 and 1.55 µm, and the power consumption is quite small. The bandwidth of APD’s is mainly determined by the avalanche buildup time and the carrier transit time. A superlattice (SL) structure is efficient for reducing the avalanche buildup time by enhancing the ionization-rate ratio.1 The carrier transit time, on the other hand, is determined by the layer thickness. We developed an InGaAsP/InAlAs SL-APD with a flip-chip structure to increase the gain-bandwidth (GB) product and the maximum bandwidth.

© 1993 Optical Society of America

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