Abstract

A very efficient Multiple Quantum Well modulator is fabricated from InGaAsP/InGaAsP layers grown by AP-MOCVD. It exhibits at 1.54 μm a 17 dB extinction ratio for a 3 V drive voltage, a 2.7 dB on-state loss and a bandwidth over 20 GHz with 1-2 mW of coupled optical power.

© 1992 Optical Society of America

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