Abstract

(Invited) Highly sensitive photoreceivers are strongly needed for application to the higher bit rate optical communication systems around 10 Gb/s. To achieve high-sensitivity and high-speed responses in this high bit rate region, reduction of the photodetedor capacitance as well as widening of the bandwidth is crucial. Flip-chip bonding will be the key assembly technologyl2 to achieve these requirements, because surplus bonding pad area capacitance in conventional front-illuminated pho-todiodeand parasiticreactances associated with the interconnection can be minimized. In addition, hybrid assembly enables the best transistor choice for the following amplifier. This paper reports, to the best of our knowledge, the first implementation of the flip-chip, planar junction InGaAs avalanche photodiodes (APDs) with an ultra-low capacitance and a large gain-bandwidth product.

© 1991 Optical Society of America