Abstract
High power, high efficiency lasers are essential for the distribution of, e.g., TV signals to a large number of subscribers. So far, InP based lattice matched quantum well lasers have not shown the dramatic improvement in performance over bulk DH lasers1-3 as in GaAs lasers since the major loss mechanisms, such as Auger recombination (AR) and intervalence band absorption (IVBA), are not reduced. Strained InGaAs layers grown on InP have a modified valence band structure4 and an increased conduction band discontinuity,5 which may eliminate the AR, IVBA, and heterobarrier leakage to a great extent, and improved laser performance is expected.
© 1990 Optical Society of America
PDF ArticleMore Like This
U. Koren, M. Oron, M. G. Young, B.I. Miller, J.L. De Miguel, G. Raybon, and M. Chien
PD3 Integrated Photonics Research (IPR) 1990
S. D. OFFSEY, W. J. SCHAFF, P. J. TASKER, and L. F. EASTMAN
FE5 Optical Fiber Communication Conference (OFC) 1990
H. K. CHOI and C. A. WANG
CMH2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1990