120-mW cw output power from 1.5-μm wavelength modulation doped InGaAs strained-layer quantum well lasers

P. J. A. THIJS; T. VAN DONGEN; B. H. VERBEEK

doi:10.1364/OFC.1990.WJ2

Optical Fiber Communication
OSA Technical Digest (Optica Publishing Group, 1990),
paper WJ2
•https://doi.org/10.1364/OFC.1990.WJ2

120-mW cw output power from 1.5-μm wavelength modulation doped InGaAs strained-layer quantum well lasers

P. J. A. THIJS, T. VAN DONGEN, and B. H. VERBEEK

Optical Fiber Communication Conference 1990

San Francisco, California United States
ISBN:

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Lasers. 1: Quantum Well and Strained Layer Lasers (WJ)

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P. J. A. THIJS, T. VAN DONGEN, and B. H. VERBEEK, "120-mW cw output power from 1.5-μm wavelength modulation doped InGaAs strained-layer quantum well lasers," in Optical Fiber Communication, OSA Technical Digest (Optica Publishing Group, 1990), paper WJ2.

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Abstract

High power, high efficiency lasers are essential for the distribution of, e.g., TV signals to a large number of subscribers. So far, InP based lattice matched quantum well lasers have not shown the dramatic improvement in performance over bulk DH lasers^1-3 as in GaAs lasers since the major loss mechanisms, such as Auger recombination (AR) and intervalence band absorption (IVBA), are not reduced. Strained InGaAs layers grown on InP have a modified valence band structure⁴ and an increased conduction band discontinuity,⁵ which may eliminate the AR, IVBA, and heterobarrier leakage to a great extent, and improved laser performance is expected.

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