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Advanced epitaxial techniques for optoelectronic devices

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Abstract

High speed interconnection networks, local area networks, and optical recording systems require high density linear arrays of individually addressable lasers. A practical implementation of injection lasers in these applications requires that the lasers have ultralow threshold (<1 mA), high differential quantum efficiency (80%), and high yield. These specifications exceed what is currently possible in an integrated array of the type required. Although low threshold lasers with high differential quantum efficiency have been fabricated,1 the processes typically employed are not amenable to high yield integrated devices, and no work has yet addressed the problems associated with crosstalk (electrical and optical) in such arrays.

© 1990 Optical Society of America

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