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Conferences > OFC > 1990 > FA > FA2

Very high gain Er3+ fiber amplifier pumped at 980 nm

W. J. MINISCALCO, B. A. THOMPSON, ELLIOTT EICHEN, and T. WEI

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Abstract

The relatively small ground state absorption cross section and large excited state absorption cross section at ≈800 nm make Al- GaAs diode lasers unattractive as pumps for Er3+ doped silica fiber lasers and amplifiers. A more promising approach is to excite the 4i11/2 state at ≈980 nm.1 This pump band has a large ground state absorption cross section and is free of excited state absorption. Laming et al. demonstrated a high efficiency amplifier diode pumped at this wavelength.2

© 1990 Optical Society of America

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