A narrow linewidth1 is very desirable for many applications of laser diodes. The dependence of the linewidth on the geometrical structure of the cavity of InGaAsP Fabry-Perot laser diodes (at λ = 1.3 μm) is numerically evaluated. Simulations based on the solution of the rate equations including an improved gain function were carried out. The results of the parameter variation show the way to a considerable reduction of the linewidth by minimizing the carrier density at threshold.

© 1989 Optical Society of America

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