Abstract

We report the growth and fabrication of low-threshold high-power high-yield single-longitudinal 1.3-μm InGaAsP/lnP capped mesa buried heterostructure (CMBH) lasers by a combination of hydride and organometallic vapor phase epitaxial techniques. Using a multiple-barrel hydride vapor phase epitaxial (VPE) reactor, we can reproducibly grow high-quality distributed feedback (DFB) double heterostructure (DH) over conventional first-order gratings (grating period = 0.2010 μm) that are etched onto InP substrates. The DH consisted of three layers: a λg = 1.1-μm n-InGaAsP waveguide layer grown directly on the DFB grating; a λg = 1.3-μm InGaAsP active layer; and a p-InP cladding layer. These DH structures exhibit excellent optical and electrical properties with broad area thresholds of 1 kA/cm2. Cross-sectional transmission electron micrographs of this material show clean interfaces and excellent grating preservation with grating amplitudes normally between 600 and 800 A.

© 1989 Optical Society of America

PDF Article
More Like This
Improved high-temperature performance of 1.52-μm InGaAsP laser diodes fabricated with two-step vapor-phase and liquid-phase epitaxial growth

T. Yanase, Y. Kato, M. Kitamura, K. Nishi, M. Yamaguchi, H. Nishimoto, I. Mito, and R. Lang
ME7 Optical Fiber Communication Conference (OFC) 1985

Monolithic Integration of InGaAsP/lnP distributed-feedback laser and electroabsorption modulator by vapor-phase epitaxy

MASATOSHI SUZUKI and YUKIO NODA
THF4 Optical Fiber Communication Conference (OFC) 1987

Forty-picosecond photoconductive response time in single crystal InP:Fe and InAsP:Fe layers grown by hydride vapor phase epitaxy

A. M. JOHNSON, T. J. BRIDGES, W. M. SIMPSON, and A. TURNER
THI6 Conference on Lasers and Electro-Optics (CLEO) 1989