The development of optoelectronic integrated circuitry based on InP substrates for use in high-speed fiber-optic communication systems is now receiving a great deal of attention. However, the rate of progress in this area is heavily dependent on the establishment of enabling growth and processing technologies, which allow the close integration of high-quality electrooptic devices such as lasers, detectors, FETs, modulators, and waveguides on the same chip. Of crucial importance from the materials viewpoint is the need for a growth process capable of providing high-quality GaInAsP compounds lattice matched to InP over large areas with close control of thickness, composition, interface quality and doping profiles, as well as the facility for selective area epitaxy. In addition, the technology used needs to be capable of high-volume production for large-scale usage and have the flexibility to make further developments possible in the future.

© 1988 Optical Society of America

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