Quantum-well (QW) lasers have been reported extensively for the GaAs/ GaAIAs material system. Very-low-threshold currents have been achieved using the graded-index separate confinement heterostructure (GRIN SCH) QW design. In addition, high quantum efficiencies and a weak dependence of threshold currents and quantum efficiencies on cavity length have been reported. There has also been some work in the InP/InGaAsP material system.2-4

© 1988 Optical Society of America

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