Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

High-speed 1.3-μm burled crescent injection lasers with semi-insulating current blocking layers

Not Accessible

Your library or personal account may give you access

Abstract

The fabrication and performance of high-speed and high-power 1.3-μm InGaAsP buried crescent lasers with semi-insulating (SI) current blocking layers are reported. These semi-insulation buried crescent (SIBC) lasers have a 3-dB modulation bandwidth of 11 GHz and cw output power of 42 mW/ facet. This is the highest modulation bandwidth and output power yet reported for an InGaAsP laser with a semi-insulating blocking layer.

© 1988 Optical Society of America

PDF Article
More Like This
High speed 1.3µm InGaAsP Buried Crescent Injection Lasers With Semi-Insulating Current Confinement Layer

W. H. Cheng, C. B. Su, K. D. Buehring, C. P. Chien, J. W. Ure, D. Perrachione, D. Renner, K. L. Hess, and S. W. Zehr
TuD3 Semiconductor Lasers (ASLA) 1987

Wide-Bandwidth and High-Power 1.3 µm InGaAsP Buried Crescent Lasers with Semi-Insulating Fe-doped InP Current Blocking Layers

C. E. Zah, J. S. Osinski, S. G. Menocal, N. Tabatabaie, T. P. Lee, A. G. Dentai, and C. A. Burrus
TuD4 Semiconductor Lasers (ASLA) 1987

Direct modulation of high-power 1.3-μm p-substrate burled crescent lasers Into the X-band

W. NG, R. CRAIG, and H. W. YEN
WB4 Optical Fiber Communication Conference (OFC) 1988

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved