An InGaAs-APD, with not only a larger gain-bandwidth product but also a wider bandwidth in the lower multiplication regime (M ≤ 10), is required for Gbs range optical transmission systems. Previously, we reported an improved gain-bandwidth product APD, achieved by increasing the carrier concentration in the InP multiplication region to reduce the avalanche buildup time.1 We report further improvement in the bandwidth by reducing the active area and heterostructure modifications.

© 1988 Optical Society of America

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