We introduce a calculation method for the frequency response of an avalanche photodiode (APD) considering the electric field profile. By applying this method to an InGaAs APD, we obtained the relationship between the gain- bandwidth (GB) product and the carrier concentration (Nb) of the multiplication layer. This result explains the present experimental data and shows that the upper limit of the GB product is 140 GHz at Nb = 2 × 1017 cm−3. This limit is determined by the onset of the tunneling current in the multiplication layer.

© 1988 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription