While much progress has been made in light source and detector technology in the InGaAs/InP and InGaAsP/InP material system, the fabrication of an InP-based electronic circuit technology still remains in the research stage. MESFET technology cannot be implemented as a result of the low Schottky barrier height on InGaAs, while the preparation of high-quality MISFETs on InP has turned out to be difficult1 due to the undesirable characteristics of the metal-insulator-semiconductor interfaces.

© 1987 Optical Society of America

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription