Indium Gallium Arsenide (InGaAs) photodetectors have been fabricated which exhibit dark current as low as 10 picoamps (−5V), quantum efficiencies as high as 35% at 850nm, 90% at 1300nm, 93% at 1550nm and failure rates below 1 in 109 hours (1 Failure unIT = 1 FIT). The devices have 75 micron diameter active regions with InP "cap" layers. Pulse response times below 35 picoseconds have also been measured.

© 1987 Optical Society of America

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