Abstract

There has been a strong demand for short-wavelength (λ = 0.7-0.9-μm) distributed feedback (DFB) lasers for application to short-distance wavelength-division-multiplexed (WDM) networks, fiber-optic sensors, laser printers, optical disk memory systems, and GaAs integrated optoelectronic circuits (IOECs). However, a practicable AlGaAs/GaAs DFB laser has not yet been found, because regrowth on the corrugated AlGaAs surface is difficult by conventional liquid phase epitaxy (LPE) due to its oxidation and melt-back problems.

© 1986 Optical Society of America