Abstract
We present a technique developed to etch grooves more than 70 µm deep and less than 20 µm wide into n-type indium phosphide wafers for the purpose of inducing precise wafer-scale cleaving of specific-cavity-length lasers. The technique is applicable to many types of semiconductor laser, including AlGaAs and InGaAsP, buried heterostructure and ridge waveguide, and DFB, DBR, and cleaved-coupled-cavity (C3) lasers. Photoelectrochemical (PEC) etching creates high-aspect-ratio grooves, is not destructive, is reproducible, and is compatible with standard fabrication techniques.
© 1985 Optical Society of America
PDF ArticleMore Like This
J. E. Bowers and B. R. Hemenway
WO2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1985
T. P. Lee, C. A. Burrus, and D. P. Wilt
TUP3 Optical Fiber Communication Conference (OFC) 1985
R. M. Lum, A. M. Glass, A. A. Ballman, F. W. Ostermayer, P. A. Kohl, and R. A. Logan
THK2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1984