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Reliability of InGaAsP light emitting diodes at high current density

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Abstract

InGaAsP LEDs at 1.3 μm (the fiber dispersion minimum) are attractive alternatives to lasers in optical transmission systems. In front emitting LEDs made with a small diameter p-surface contact, the light can be efficiently coupled into an optical fiber positioned above the surface. The p contact is usually isolated with a dielectric layer. LEDs of this type have been shown to be exceptionally reliable at current densities up to 8 kA/cm2, with projected median lives >108 h at 60°C.1 InGaAsP LEDs are not subject to dark line defect formation from ex- isting threading dislocations and from processing induced damage as are GaAIAs LEDs. They, therefore, do not exhibit the infant mortality which is a major problem in the yield or reliability of GaAIAs devices. However, the formation of dark spot defects (DSD) becomes an important failure mode at high current densities.

© 1982 Optical Society of America

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