Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Optoelectronic broadband matrix switch

Not Accessible

Your library or personal account may give you access

Abstract

Optoelectronic switches based on Si photodiodes have been reported.1 Such switches have long switching times (~100 nsec) because the electric charge stored in the depletion layer capacitance under forward biasing needs to be discharged. The electric power (~10 mW) needed for the off-state may also present a heat problem in large scale matrices in integrated form.

© 1981 Optical Society of America

PDF Article
More Like This
Optical Waveguide Interconnects in Optoelectronic Matrix Switches

M. Ersoni, X. Wu, P. E. Jessop, and J. P. Noad
IMH8 Integrated Photonics Research (IPR) 1996

Optical and optoelectronic broadband switching architectures

S. F. Su and L. Jou
THPO31 OSA Annual Meeting (FIO) 1987

Multikilovolt picosecond optoelectronic switching in CdS0.5Se0.5

V. K. Mathur, Wei-Lou Cao, C. S. Chang, M. J. Rhee, and Chi H. Lee
THM22 Conference on Lasers and Electro-Optics (CLEO:S&I) 1981

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.