Abstract

Optoelectronic switches based on Si photodiodes have been reported.1 Such switches have long switching times (~100 nsec) because the electric charge stored in the depletion layer capacitance under forward biasing needs to be discharged. The electric power (~10 mW) needed for the off-state may also present a heat problem in large scale matrices in integrated form.

© 1981 Optical Society of America

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