InGaAsP/InP burled crescent laser diode (λ = 1.3 μm) with very low threshold current and fundamental transverse mode

E. Oomura; H. Higuchi; R. Hirano; H. Namizaki; I. Murotani; W. Susaki; K. Shirahata

doi:10.1364/OFC.1981.TUA4

Integrated Optics and Optical Fiber Communication
OSA Technical Digest (Optica Publishing Group, 1981),
paper TUA4
•https://doi.org/10.1364/OFC.1981.TUA4

InGaAsP/InP burled crescent laser diode (λ = 1.3 μm) with very low threshold current and fundamental transverse mode

E. Oomura, H. Higuchi, R. Hirano, H. Namizaki, I. Murotani, W. Susaki, and K. Shirahata

Optical Fiber Communication Conference 1981

San Francisco, California United States
27–29 April 1981
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Long-Wavelength Sources and Detectors: 1 (TUA)

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E. Oomura, H. Higuchi, R. Hirano, H. Namizaki, I. Murotani, W. Susaki, and K. Shirahata, "InGaAsP/InP burled crescent laser diode (λ = 1.3 μm) with very low threshold current and fundamental transverse mode," in Integrated Optics and Optical Fiber Communication, M. Barnoski, T. Giallorenzi, J. Goell, J. Midwinter, and Y. Suematsu, eds., OSA Technical Digest (Optica Publishing Group, 1981), paper TUA4.

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Abstract

As light sources for optical communication systems, diode lasers must exhibit low threshold current and stable fundamental transverse mode operation. An InGaAsP/InP buried crescent (BC) laser is one of the most promising lasers satisfying these requirements.¹ In the earlier BC laser, however, some devices exhibited higher-order transverse modes at high pump levels. The structure has now been improved by reducing the width and thickness of the active region to stabilize the transverse mode and to reduce the threshold current.

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