We propose and theoretically demonstrate a high-speed and high-power silicon-germanium photodiode assisted by doping region regulation. The simulations imply a large 3 dB bandwidth of 14 GHz at 30 mW input optical power.

© 2019 The Author(s)

PDF Article


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription