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Conferences > OEDI > 2019 > OW3D > OW3D.3
  • International Photonics and OptoElectronics Meeting 2019 (OFDA, OEDI, ISST, PE, LST, TSA)
  • OSA Technical Digest (Optica Publishing Group, 2019),
  • paper OW3D.3
  • •https://doi.org/10.1364/OEDI.2019.OW3D.3

Design of high-speed and high-power Si-Ge photodiode assisted by doping region regulation

Zhibin Jiang, Yu Yu, Yilun Wang, De Zhou, Wentao Deng, and Xinliang Zhang

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Abstract

We propose and theoretically demonstrate a high-speed and high-power silicon-germanium photodiode assisted by doping region regulation. The simulations imply a large 3 dB bandwidth of 14 GHz at 30 mW input optical power.

© 2019 The Author(s)

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