Abstract

The bandgap and the spin orbit splitting of InGaAsBi/InP is presented with respect to Bi concentrations. At 5% Bi, ΔSO>Eg. We’ve found that In0.53Ga0.47As0.942Bi0.058/InP is the first sample with ΔSO>Eg from 20 to 300 K.

© 2019 The Author(s)

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