Abstract

Phase-change wet-etching technology using GeSbTe films are being developed. A selective etching between the amorphous and the crystalline could be carried out with an alkaline etchant of NaOH. The degree of etching was investigated by the transmittance between the crystalline and amorphous films during the etching process. Etching selectivity is not only dependent on the concentration of the etchant but also the metal film which roles as the thermal control layer. Specifically, positive and negative pits could be fabricated with different metal layer. The uniformity and the shape of the current pits need to be improved for the high density media application.

© 2007 Optical Society of America