Abstract

GaInNAs-SOA was investigated. The peak chip gain of 14dB and 3-dB gain bandwidth of 49 nm were realized. Small dependence of gain on temperature and good dynamic response to 40 Gbps optical pulses were obtained.

© 2004 Optical Society of America

PDF Article
More Like This
1.3 µm Travelling-Wave GaInNAs Semiconductor Optical Amplifier

Jun-ichi Hashimoto, Kenji Koyama, Tsukuru Katsuyama, Yasuhiro Iguchi, Takashi Yamada, Shigenori Takagishi, Masashi Ito, and Akira Ishida
WB3 Optical Amplifiers and Their Applications (OAA) 2003

1.3 µm GaInNAs Bandgap Difference Confinement (BDC) Optical Amplifier

Jun-ichi Hashimoto, Kenji Koyama, Tsukuru Katsuyama, Yukihiro Tsuji, Kousuke Fujii, Koichiro Yamazaki, and Akira Ishida
CMF4 Conference on Lasers and Electro-Optics (CLEO) 2005

Semiconductor optical amplifiers near 1.3 µm based on InGaAs/GaAs quantum dots

M. Laemmlin, D. Bimberg, A.V. Uskov, A.R. Kovsh, and V.M. Ustinov
CThB6 Conference on Lasers and Electro-Optics (CLEO) 2004

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription